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  • 1
    Electronic Resource
    Electronic Resource
    Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1506-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Feasibility of an oxidized Ni/Au p contact on some aspects of device applications for a GaN/InGaN multiple quantum well light-emitting diode (LED) was investigated. For the oxidation of Ni/Au p contact, furnace annealing of a completely fabricated LED was performed at 600 °C for 5 min in an O2 ambient. For the case of LED with an oxidized Ni/Au system, the I–V measurements showed a reduction in series resistance of the diode by 17.2%. In addition, the optical output power of the oxidized LED was increased by a factor of 2. However, a significant degradation in reliability characteristics was observed, which might detract from the direct application of the Ni/Au oxidation process. We also conclude that the improvement of oxidized Ni/Au contact properties is mainly due to the formation of an intermediate NiO layer, rather than an enhancement in p-type activation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334631
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  • 2
    Electronic Resource
    Electronic Resource
    InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4464-4466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12×10−3 Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373092
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  • 3
    Electronic Resource
    Electronic Resource
    Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 70-72 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm−3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current–voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10−4 Ω cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123954
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6514-6518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of indium segregation and hydrogen on the optical and structural properties of InGaN/GaN multiple quantum wells, grown by metalorganic chemical vapor deposition were investigated. Photoluminescence and high-resolution transmission electron microscopy analysis showed that two types of indium-rich regions can be formed in the InGaN well layers. Self-assembled quantum dot-like indium-rich regions were found in the well layer grown at a normal growth temperature. These regions behaved as luminescent centers, showing a maximum indium content at the center of indium-rich region. However, randomly-distributed indium-segregated regions, which formed near the upper interface of the InGaN well layers during the subsequent high-temperature annealing process led to the degradation of the optical properties by generating defects such as misfit dislocations. The use of hydrogen during the growth interruption was found to be very effective in suppressing the formation of indium-segregated regions in the InGaN well layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370368
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  • 5
    Electronic Resource
    Electronic Resource
    Ultrahigh transparency of Ni/Au ohmic contacts to surface-treated p-type GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5490-5492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on ultrahigh-transparency and low-resistance Ni/Au ohmic contacts to surface-treated p-GaN:Mg (3.6×1017 cm−3). It is shown that annealing at 500 °C for 1 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 5.0(±1.0)×10−3 and 2.5(±1.0)×10−3 Ω cm2 for the as-deposited and annealed samples, respectively. It is also shown that the light transmittance is 90.3(±0.6) and 97.3(±0.8) % (at 470 nm) for the as-deposited and annealed contacts, respectively. Furthermore, the surface of the annealed contact is found to be fairly smooth with a root-mean-square roughness of 0.84 nm. These results are compared with those previously reported for the Ni/Au contacts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312832
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  • 6
    Electronic Resource
    Electronic Resource
    Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4591-4593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH4)2S solution and (NH4)2S+t-C4H9OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH4)2S+t-C4H9OH results in a more effective passivation of the n-GaN surface than that with (NH4)2S due to a higher chemical reactivity of sulfur species in the former solution. The (NH4)2S+t-C4H9OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current–voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373107
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  • 7
    Electronic Resource
    Electronic Resource
    Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7667-7670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on etch-induced damage in n-type GaN caused by an inductively coupled plasma, and damage recovery by means of treatment with an N2 plasma. As the plasma dc bias was increased by increasing the rf table power during etching, the optical and electrical properties of the etched GaN films deteriorated as the result of etch-induced damage. However, an N2 plasma treatment for the etched samples effectively removed the etch-induced defects and damage on the surface, leading to improved surface morphology, photoluminescence, and ohmic contact in n-type GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373438
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  • 8
    Electronic Resource
    Electronic Resource
    Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1326-1328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An advanced model to explain the current spreading phenomenon of a conventional GaN-based light-emitting diode is presented. For this work, an equivalent circuit, consisting of the two lateral resistance components of the p-transparent electrode and the n-type layer is proposed. Theoretical calculations clearly reveal that the current density crowds near the n or p pads according to the device parameters and has an exponential behavior as a function of the lateral length. Based on these results, appropriate device parameters including the critical transparent-electrode thickness were determined, leading to a perfectly uniform current distribution. It was even possible to demonstrate the ideal device geometry without the need for a transparent electrode such as an interdigitated structure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1499994
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effect of CH3CSNH2 solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×1018 cm−3). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample. Current-voltage (I–V) results show that the sulfide treatment significantly improves the specific contact resistance. The annealing of the sulfide-treated sample (at 700 °C) results in a specific contact resistance of 3.1×10−6 Ω cm2. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core levels shift toward the higher-binding energy side by 0.2 eV for the sulfide-treated sample and by 0.4 eV for the annealed (sulfide-treated) sample, compared with that of the untreated one. It is further shown that the intensity of O 1s core level decreases with the sulfide treatment. Based on the I–V and XPS results, the sulfide and annealing treatment dependence of the specific contact resistance is discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1475773
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2713-2715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of high-quality GaN on a Si(111) substrate using a five step-graded AlxGa1−xN (x=0.87–0.07) interlayer between GaN epilayer and AlN buffer layer by ultrahigh vacuum chemical vapor deposition. The crack density and the surface roughness of the GaN layer grown on the graded AlxGa1−xN interlayer were substantially reduced, compared to those of GaN grown on an AlN buffer layer. Significant improvement in the structural and optical properties of the GaN layer was also achieved by the use of a graded interlayer. These results are attributed to the decrease of the lattice mismatch between GaN and AlN layer, and the reduction of the thermal stress by the graded interlayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412824
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