ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An approach using two terminal current measurements obtained in a cyclic current–voltage sweeping procedure, is shown to be very useful in detecting damage in poly-Si/ultra-thin SiO2/substrate Si gate structures subjected to dry etching. The current peaks seen in this approach, are shown to be due to displacement currents and to have different features depending on whether the capacitor structures were subjected to plasma charging currents, or plasma photon/particle exposure during etching. A model is presented relating these features to localized states at or near the SiO2/substrate interface. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361067
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