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  • 1
    Electronic Resource
    Electronic Resource
    InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4464-4466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12×10−3 Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373092
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  • 2
    Electronic Resource
    Electronic Resource
    Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7667-7670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on etch-induced damage in n-type GaN caused by an inductively coupled plasma, and damage recovery by means of treatment with an N2 plasma. As the plasma dc bias was increased by increasing the rf table power during etching, the optical and electrical properties of the etched GaN films deteriorated as the result of etch-induced damage. However, an N2 plasma treatment for the etched samples effectively removed the etch-induced defects and damage on the surface, leading to improved surface morphology, photoluminescence, and ohmic contact in n-type GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373438
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 599-601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the photoluminescence (PL) of InGaN films, grown by metalorganic chemical vapor deposition, has been investigated. A strained InGaN thin film which contains composition-fluctuated regions shows the so-called S-shaped temperature dependence of the dominant PL peak energy. However, an InGaN thick film which contains quantum dot-like In-rich regions shows a sigmoidal temperature dependence of the dominant PL peak energy, as the result of a transfer of carriers from the band-edge related luminescent centers to quantum dot-like In-rich regions. It is also found that the activation energy for the thermal quenching of PL intensity in the InGaN thick film which contains quantum dot-like In-rich regions is larger than that in the strained InGaN thin film which contains composition-fluctuated regions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389327
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  • 4
    Electronic Resource
    Electronic Resource
    Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3079-3081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mg-doped GaN films, grown by metalorganic chemical vapor deposition, were treated with a nitrogen plasma after a conventional rapid thermal annealing (RTA). The conductivity of the p-type GaN film was greatly enhanced by nitrogen plasma treatment, and exhibited a higher sheet hole concentration as well as lower sheet resistance than the RTA samples. A photoluminescence (PL) band which peaked at 3.27 eV was new, and a band at 2.95 eV was markedly attenuated in the plasma treated samples. PL measurements suggest that self-compensation in a Mg-doped GaN caused by the nitrogen vacancies is effectively reduced by the nitrogen plasma treatment, leading to an enhanced p-type conductivity. In addition, the plasma-treated sample revealed a drastic reduction in specific contact resistance by three orders of magnitude, compared with the RTA samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126585
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  • 5
    Electronic Resource
    Electronic Resource
    Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3842-3844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-resistance and nonalloyed ohmic contacts to epitaxially grown n-ZnO were formed by exposing n-ZnO to an inductively coupled hydrogen and an argon plasma. Using Ti/Au, the specific contact resistivity of the ohmic contact was drastically decreased from 7.3×10−3 to 4.3×10−5 Ω cm2 by hydrogen plasma treatment. The photoluminescence spectrum of the hydrogen plasma treated ZnO showed a large enhancement in band-edge emission and a strong suppression in deep-level emission. These results suggest that the low contact resistivity can be attributed to an increase in carrier concentration on the ZnO surface. The specific contact resistivity of the Ar-plasma treated sample was also decreased to 5.0×10−4 Ω cm2, presumably due to the formation of shallow donor on the ZnO surface by ion bombardment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379061
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling of a GaN-based light-emitting diode for uniform current spreading (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1903-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from the view point of uniform current spreading. By means of simple modeling, it was found that the current density and the length of the lateral current path through the transparent layer represent dominant parameters in determining uniform current spreading. In this regard, we studied the effect of current density on the reliability characteristics of the LED. We were able to significantly improve the electrical, optical, and reliability characteristics of the LED in terms of reducing the length of the lateral current path through the transparent layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311819
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