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  • 1
    Electronic Resource
    Electronic Resource
    InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4464-4466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12×10−3 Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373092
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  • 2
    Electronic Resource
    Electronic Resource
    Stress relaxation in Si-doped GaN studied by Raman spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5787-5791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the Si-doping-induced relaxation of residual stress in GaN epitaxial layers grown on (0001) sapphire substrate by the metalorganic vapor phase epitaxy technique. Micro-Raman spectroscopy is used to assess stress situation in the films with systematically modulated doping concentration from 4.0×1017 up to 1.6×1019 cm−3. As the Si-doping concentration increases, a monotonic decrease of the E2 phonon frequency is observed, which signifies gradual relaxation of the stress in the film. The layers are fully relaxed when electron concentration exceeds 1.6×1019 cm−3. The linear coefficient of shift in Raman frequency (ω) induced by the in-plane biaxial compressive stress (σ(parallel)) is estimated to be Δω/Δσ(parallel)=7.7 cm−1/GPa. We suggest that Si doping increases density of misfit dislocation, judging from linewidth of x-ray rocking curve. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367501
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  • 3
    Electronic Resource
    Electronic Resource
    Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4591-4593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sulfur passivation of an n-GaN surface was investigated by employing an aqueous (NH4)2S solution and (NH4)2S+t-C4H9OH solution. Photoluminescence and Auger electron spectroscopy revealed that treatment with (NH4)2S+t-C4H9OH results in a more effective passivation of the n-GaN surface than that with (NH4)2S due to a higher chemical reactivity of sulfur species in the former solution. The (NH4)2S+t-C4H9OH-treated sample shows a stronger photoluminescence intensity by a factor of 2.5 with respect to an untreated sample. In addition, improved Ohmic characteristics of the sample are evident from current–voltage measurements. This result can be attributed to the effective removal of an insulating layer on the n-GaN surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373107
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  • 4
    Electronic Resource
    Electronic Resource
    Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7667-7670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on etch-induced damage in n-type GaN caused by an inductively coupled plasma, and damage recovery by means of treatment with an N2 plasma. As the plasma dc bias was increased by increasing the rf table power during etching, the optical and electrical properties of the etched GaN films deteriorated as the result of etch-induced damage. However, an N2 plasma treatment for the etched samples effectively removed the etch-induced defects and damage on the surface, leading to improved surface morphology, photoluminescence, and ohmic contact in n-type GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373438
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  • 5
    Electronic Resource
    Electronic Resource
    Band-gap narrowing and potential fluctuation in Si-doped GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122964
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  • 6
    Electronic Resource
    Electronic Resource
    Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1359-1361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic study accomplished with a series of undoped and Si-doped GaN epilayers grown on sapphire (0001) with the carrier concentration of 4.0×1017−1.6×1019 cm−3 in order to investigate the evolution of stress relaxation and yellow luminescence by Si incorporation. As the Si doping becomes higher, the bound exciton peaks are gradually shifted to lower energy due to relaxation of the thermal residual stress with the linear coefficient of ΔE/Δσ(parallel)=42 meV/GPa. The present results show that both the full width at half maximum of double-crystal x-ray diffractometry and the photoluminescence intensity ratio of the yellow luminescence to edge emission gradually increase as the Si incorporation becomes heavier. We suggest that the Si doping in GaN epilayers induces overall defects and gives rise to stress relaxation during the cool-down process, and the yellow luminescence may be originated from a complex of VGa and the Si-induced defect. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119893
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  • 7
    Electronic Resource
    Electronic Resource
    Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3079-3081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mg-doped GaN films, grown by metalorganic chemical vapor deposition, were treated with a nitrogen plasma after a conventional rapid thermal annealing (RTA). The conductivity of the p-type GaN film was greatly enhanced by nitrogen plasma treatment, and exhibited a higher sheet hole concentration as well as lower sheet resistance than the RTA samples. A photoluminescence (PL) band which peaked at 3.27 eV was new, and a band at 2.95 eV was markedly attenuated in the plasma treated samples. PL measurements suggest that self-compensation in a Mg-doped GaN caused by the nitrogen vacancies is effectively reduced by the nitrogen plasma treatment, leading to an enhanced p-type conductivity. In addition, the plasma-treated sample revealed a drastic reduction in specific contact resistance by three orders of magnitude, compared with the RTA samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126585
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  • 8
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    Global, regional and local health impacts of civil aviation emissions (2015)
    Institute of Physics (IOP)
    Details
    Publication Date: 2015-02-27
    Description: Aviation emissions impact surface air quality at multiple scales—from near-airport pollution peaks associated with airport landing and take off (LTO) emissions, to intercontinental pollution attributable to aircraft cruise emissions. Previous studies have quantified aviation’s air quality impacts around a specific airport, in a specific region, or at the global scale. However, no study has assessed the air quality and human health impacts of aviation, capturing effects on all aforementioned scales. This study uses a multi-scale modeling approach to quantify and monetize the air quality impact of civil aviation emissions, approximating effects of aircraft plume dynamics-related local dispersion (∼1 km), near-airport dispersion (∼10 km), regional (∼1000 km) and global (∼10 000 km) scale chemistry and transport. We use concentration-response functions to estimate premature deaths due to population exposure to aviation-attributable PM 2.5 and ozone, finding that aviation em...
    Print ISSN: 1748-9318
    Electronic ISSN: 1748-9326
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering
    Published by Institute of Physics (IOP)
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