ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on etch-induced damage in n-type GaN caused by an inductively coupled plasma, and damage recovery by means of treatment with an N2 plasma. As the plasma dc bias was increased by increasing the rf table power during etching, the optical and electrical properties of the etched GaN films deteriorated as the result of etch-induced damage. However, an N2 plasma treatment for the etched samples effectively removed the etch-induced defects and damage on the surface, leading to improved surface morphology, photoluminescence, and ohmic contact in n-type GaN. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373438
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