In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 1252 ( 2010)
Abstract:
Dysprosium oxide (Dy 2 O 3 ) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy 2 O 3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy 2 O 3 (110)║Ge(100) and Dy 2 O 3 [001]║Ge[011] . Atomic force microscopy results show that the surface of the Dy 2 O 3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy 2 O 3 . TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-1252-I03-01
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2010
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