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  • 1
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2011
    In:  Advanced Materials Research Vol. 364 ( 2011-10), p. 417-421
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 364 ( 2011-10), p. 417-421
    Abstract: In this research, the effect of precursor concentration of CuI thin film deposited by spin coating method was studied. The wide band gap p-type semiconductor CuI thin film was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.05M to 0.5M. The speed for spin coating is 1000 rpm for 60 seconds. After the deposition the CuI thin films were annealed at 150°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 33.65 nm - 441.25 nm was obtained as the concentration increased. The increment of thickness affected the electrical property with resistivity of about 10 -6 Ω.cm and 10 1 Ω.cm was observed for all the CuI thin films. For optical properties, the transmittance decreased with high concentration as high amount of CuI particle were observed in the thin films. From the transmittance, the absorption coefficient of 10 -6 m -1 and optical band gap of 3.10 and 3.50 eV for all the films were observed using Tauc’s plot.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2011
    detail.hit.zdb_id: 2265002-7
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2011
    In:  Advanced Materials Research Vol. 403-408 ( 2011-11), p. 451-455
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 403-408 ( 2011-11), p. 451-455
    Abstract: In this study, a novel approach of using two different methods was investigated to prepare the CuI thin films. The CuI thin films in this research were prepared by spin coating method and by mister atomizer. Both methods used CuI powder as a precursor and acetonitrile as a solvent. The thickness of CuI films in this research range from nm – um thickness depending on the deposition technique. The 2 point probe I-V measurement was used to measure the electrical properties. The resistivity of about 10 6 Ω cm-10 1 Ω cm was observed with CuI thin films using spin coating technique. Then, the surface morphology shows all the films exhibit a microsturucture CuI particles in a case of mister atomizer method. For optical measurement, the ultraviolet-visible- near infrared (UV-VIS-NIR) measurement (Perkin Elmer Lambda 750) was used. The optical band gap of about ±3.1 eV and ±2.9 eV were observed in those CuI films. These properties of different technique are applicable for application in electronic devices such as in solar cells.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2011
    detail.hit.zdb_id: 2265002-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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