GLORIA

GEOMAR Library Ocean Research Information Access

X
Your search history is empty.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Keywords
Publisher
Language
Years
  • 1
    facet.materialart.
    Unknown
    Health-related quality of life of patients with newly diagnosed chronic myeloid leukemia treated with allogeneic hematopoietic SCT versus imatinib (2014)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2014-04-03
    Description: Health-related quality of life of patients with newly diagnosed chronic myeloid leukemia treated with allogeneic hematopoietic SCT versus imatinib Bone Marrow Transplantation 49, 576 (April 2014). doi:10.1038/bmt.2013.232 Authors: X-D Mo, Q Jiang, L-P Xu, D-H Liu, K-Y Liu, B Jiang, H Jiang, H Chen, Y-H Chen, X-H Zhang, W Han, Y Wang & X-J Huang
    Keywords: imatinibhematopoietic SCThealth-related quality of lifeallogeneicidentical sibling donor
    Print ISSN: 0268-3369
    Electronic ISSN: 1476-5365
    Topics: Medicine
    Published by Nature Publishing Group (NPG)
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    High power laser semiconductor interactions: A Monte Carlo study for silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1807-1812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we use Monte Carlo methods to study the interaction of high power laser pulses with electrons in the conduction band of semiconductors. The laser field is represented by a sinusoidal electric field which tends to cause an oscillatory motion in the electrons. The scattering of electrons from the lattice force the electrons to lose phase coherence with the field. The approach is applied to silicon. We use the approach to examine the carrier energy distribution and material breakdown due to the transfer of energy from the laser to the electrons followed by impact ionization. The impact ionization coefficient, α, and its dependence on the laser frequency and field strength is examined and compared to the values in a dc field. In general, the ac value is smaller than the dc value, but at low frequencies and high field strengths, the ac impact ionization coefficient approaches the dc value at the same rms field value. The importance of collisions in the energy transfer process is elucidated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364037
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical evaluation of Al–p+-GexSi1−x ohmic contacts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3110-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Al–p+-GexSi1−x contacts were studied using transmission line measurements. For this study the GeSi alloy layers were selectively formed with 30 or 90 keV Ge implantation into Si, a technique which offers a simple, self-aligned process for the fabrication of such layers. Measurements of the current–voltage characteristics showed that the metal–alloy contacts were ohmic over the voltage range examined. The specific contact resistivity was found to be a function of Ge concentration, decreasing with increasing Ge concentration for concentrations below a critical value and increasing with increasing Ge concentration above this value. The initial decrease in specific contact resistivity is attributed to the effect of Ge on the contact barrier height and width, an effect which is caused by the reduction in the band gap of the alloy. The subsequent increase in specific contact resistivity at higher Ge concentrations is believed to be due to the presence of a high concentration of dislocations in the alloy layer. The thermal stability of contacts is also reported. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363121
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2675-2683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous-wave and time-resolved photoluminescence spectroscopies have been employed to study the band-edge transitions in GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. In addition to the neutral-donor-bound exciton transition (the I2 line), a transition line at about 83 meV below the band gap has been observed in an epitaxial layer grown under a lower plasma power or growth rate. This emission line has been assigned to the band-to-impurity transition resulting from the recombination between electrons bound to shallow donors and free holes D0, h+). Systematic studies of these optical transitions have been carried out under different temperatures and excitation intensities. The temperature variation of the spectral peak position of the D0, h+) emission line differs from the band gap variation with temperature, but is consistent with an existing theory for D0, h+) transitions. The dynamic processes of the D0, h+) transition have also been investigated and subnanosecond recombination lifetimes have been observed. The emission energy and the temperature dependencies of the recombination lifetime have been measured. These results have provided solid evidence for the assignment of the D0, h+) transition and show that the motions of the free holes which participated in this transition are more or less restricted in the plane of the epitaxial layer at temperatures below 140 K and that the thermal quenching of the emission intensity of this transition is due to the dissociation of neutral donors. Our results show that time-resolved photoluminescence spectroscopy can be of immense value in understanding the optical recombination dynamics in GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361138
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Fe–N films prepared by ion-beam-assisted deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3299-3302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe–N films were prepared by ion-beam-assisted deposition at different N/Fe atomic arrival ratios to the substrates. Films consisted of nitrogen-rich α-Fe and different phases of iron nitrides including ζ-Fe2N, ε-Fe2-3N, and γ′-Fe4N were formed. The phase composition of Fe–N films was found to depend sensitively on the N/Fe atomic arrival ratio and deposition temperature. The magnetic properties of the films mainly depends on phase composition. It was found that nitrogen-rich α-Fe films exhibited higher Ms than that of the pure iron film, and their Ms could be increased further by vacuum annealing at relatively low temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360021
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Relaxation of magnetization in Cd1−xMnxTe diluted magnetic semiconductors under illumination : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5734-5736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxation of thermoremanent magnetization (TRM) of Cd1−xMnxTe diluted magnetic semiconductors (DMS) in the spin-glass state have been studied under light illumination. The relaxation of TRM can be described well by a power law decay, M(t)=M(t0)t−α (t(approximately-greater-than)t0, t0∼2 s). The variations of the decay parameter α with the illumination light intensity has been measured and a relation which indicates that α is proportional to the photogenerated carrier concentration n has been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355598
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    The nonexistence of α' high-temperature phase of HgI2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4769-4770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differential scanning calorimetry measurements of mercuric iodide (HgI2 ) do not suggest the existence of the α'-HgI2 phase, as previously reported, when the necessary precautions are taken to avoid any chemical reaction with the sample holder. This conclusion is supported by variable temperature Raman spectroscopic measurements performed in the vicinity of the melting point, where the α' was supposed to exist.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340105
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1046-1052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The normal-incidence reflectance measurement was employed to obtain the free exciton transition energy (EFX) of AlGaN alloys in AlxGa1−xN/GaN/sapphire heterostructure grown by metalorganic chemical vapor deposition. It was found that the thickness variation of the AlGaN layer may cause a noticeable change in the line shape of reflectance spectrum and impede the identification of the desired excitonic position. By using a reflection model of two absorbing layers with a transparent substrate, the experimental reflectance spectra were theoretically simulated and utilized to explain the reflection mechanism in AlxGa1−xN/GaN heterostructures. On the basis of the above analysis, the feasibility of the reflectance measurement for such heterostructures is confirmed. At room temperature, the EFXs obtained from the fitting showed an excellent agreement with the corresponding peak energies in the photoluminescence spectra. Furthermore, at the optical energy position about 100 meV above the EFX, the spectral feature of exciton-LO phonon interaction was observed in the reflectance spectrum record for low Al composition (x≤0.16). Using the Al mole fraction derived from x-ray diffraction measurement, the bowing parameter of the epitaxial AlGaN layer was determined. In the range of 0≤x〈0.3, the resulting bowing parameter shows a downward value of 0.53 eV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334923
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Chemical intermixing at FeMn/Co interfaces (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 150-152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elemental distributions of Fe, Mn, and Co in ultrathin FeMn/Co multilayers have been profiled by the x-ray anomalous scattering technique. Chemical intermixing is observed at the FeMn/Co interfaces with intermixing regions up to 14 Å. The chemical compositions in the intermixing regions are found to vary gradually from FeMn to FeMnCo2 and from FeMnCo2 to Co., respectively, but not from FeMn to Co. This result suggests that a reaction may occur and FeMnCo2 appears at the interface during the deposition. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421629
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...