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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 118 (Dec. 2006), p. 167-172 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The influence of direct current field (DCF) on powder-pack boriding has beeninvestigated by applying DCF between boriding agent and specimen during the soaking.Experimental results show that DCF has the function of heating the agent and the specimen and thusenhancing boriding. It is shown that the specimen’s side facing anode has the deepest boride casewhen the specimen is taken as cathode. It is proposed that DCF forces active boron-containingspecies to diffuse toward the specimen at the cathode. This makes boron concentration around thespecimen as cathode higher than that at the anode or other position and that in the conventionalpowder-pack boriding (CPB), which relatively decreases boron’s absorption by inner wall surfaceof the pack box and the non-working surface of the specimen. DCF’s physical effect of enhancingchemical reaction in the agent increases the activity and concentration of active boron atoms andboron-containing species, which overcomes the shortcoming that CPB can not produce enoughboron-containing species by conventional way of heating
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 118 (Dec. 2006), p. 173-178 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: High-temperature-resistant (HTR) austenitic steel HK40 is employed for beingsilicon-aluminized by being hot-dipped in molten aluminum and silicon alloys and diffusedsubsequently at 1200°C. The phases, microstructures and concentration for elements of interest inthe treated case are investigated by x-ray diffraction (XRD), optical microscopy (OM), scanningelectron microscopy (SEM) and energy dispersive spectrum of x-ray (EDS). The case composes ofthree main zones: the former hot-dipped coating zone, inter-diffusion zone, and diffusion zone of Aland Si, all of which contain quite higher contents of aluminum and silicon than substrate.Pack-carburization is used for assessing the anti-carburization behavior of the treated case. Thetreated case shows excellent property in hindering the inward-diffusion of carbon, even if theformer hot-dipped coating zone spalls off with only diffusion zone left. High contents of aluminum,silicon and oxygen are still detected on surface of the silicon-aluminized specimen aftercarburization. Good anti-carburization ability of the silicon-aluminized specimen is believed mainlyto be the result of the dense and stable Al2O3 and SiO2 films formed on the surface
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 2015-08-26
    Description: The cold tongue mode (CTM) is the second EOF mode of sea surface temperature anomaly (SSTA) variability over the tropical Pacific, and represents the out–of–phase relationship in SSTA variability between the Pacific cold tongue region and elsewhere in the tropical Pacific. A positive CTM is characterized by cold SSTA in the Pacific cold tongue region and warm SSTA in the rest of the tropical Pacific, with conditions reversed for a negative CTM. The CTM is a coupled air–sea mode, and its long–term variability is most probably induced by ocean dynamical processes in response to global warming [ Zhang et al ., 2010]. This study focuses on the specific ocean dynamical processes associated with the CTM and its possible relationship with global warming. A heat budget diagnosis of ocean temperature in the eastern equatorial Pacific shows that the net heat flux plays a damping role and the four ocean advection terms ( , and ) contribute to the temperature change associated with the CTM. Among them, the vertical advection of the anomalous temperature by the mean upwelling ( ) makes a dominant contribution to the long–term change in the CTM. The long–term change of the term is controlled mainly by the decreasing vertical gradient of the ocean temperature anomaly . The other three advection terms make a minor contribution to the long–term change in the CTM. This article is protected by copyright. All rights reserved.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
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  • 4
    Publication Date: 2015-04-23
    Description: Article Sea surface temperature anomalies in the tropical Pacific can influence global atmospheric circulation, yet prediction of this atmospheric signal is limited to less than 1 year. Here, the authors present observational and modelling evidence for multi-year predictability. Nature Communications doi: 10.1038/ncomms7869 Authors: Yoshimitsu Chikamoto, Axel Timmermann, Jing-Jia Luo, Takashi Mochizuki, Masahide Kimoto, Masahiro Watanabe, Masayoshi Ishii, Shang-Ping Xie, Fei-Fei Jin
    Electronic ISSN: 2041-1723
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General , Physics
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  • 5
    Publication Date: 2014-08-19
    Description: We show that a carbon nanotube (CNT) diode fabricated by asymmetric contacts shows a linear photocurrent in response to illumination for over six decades or dynamic range of 120 dB; in particular, it shows no sign of degradation under illumination intensity of up to 100 kW/cm 2 . This CNT diode also exhibits a continued response for incident wavelength from 1165 nm to 2100 nm, promising potentials applications in robust and wide bandwidth light sensing.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 6
    Publication Date: 2016-04-07
    Description: ZnSnN 2 is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN 2 films with a low electron concentration, in order to promote the applications of ZnSnN 2 as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN 2 films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN 2 p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10 17 to 6.78 × 10 17  cm −3 and from 0.37 to 2.07 cm 2 V −1 s −1 , corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10 3 . The achievement of this ZnSnN 2 -based p-n junction makes an opening step forward to realize the practical application of the ZnSnN 2 material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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