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  • 1
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2011
    In:  Advanced Materials Research Vol. 403-408 ( 2011-11), p. 1178-1182
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 403-408 ( 2011-11), p. 1178-1182
    Abstract: Nanoparticles ZnO thin films have been deposited using sol-gel spin coating technique. A 0.4M sol of ZnO had been prepared by dissolving zinc acetate dihydrate in monoethanolamine (MEA), and 2-methoxyethanol as a stabilizer. Thin films are then spin coated onto quartz substrate with rotation speed of 3000rpm. After each layer, the samples were heated at 150 oC and annealed at 550 oC; which are defined as layer-by-layer process. The aim of this paper is to study the effect of annealing time to the structural, electrical and optical properties of the films. XRD result shows highest peak observed from sample annealed for 1 hour at (102) and (002) orientation. Calculation shows that the film annealed for 1 hour gives lower resistivity at 92.29Ω.cm which is due to the oxygen adsorption and good crystalline quality. Photoluminescence measurements exhibit UV emission centred at 380 nm and yellow-orange emission centred at 580 nm. Optical transmittance of the films show transparency above 70% for sample annealed for 30 minutes.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2011
    detail.hit.zdb_id: 2265002-7
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  • 2
    In: Journal of Nanomaterials, Hindawi Limited, Vol. 2012 ( 2012), p. 1-15
    Abstract: We have fabricated metal-semiconductor-metal- (MSM-) type ultraviolet (UV) photoconductive sensors using aluminium- (Al-) doped zinc oxide (ZnO) nanorod arrays that were annealed in different environments: air, oxygen, or a vacuum. The Al-doped ZnO nanorods had an average diameter of 60 nm with a thickness of approximately 600 nm that included the seed layer (with thickness ~ 200 nm). Our results show that the vacuum-annealed nanorod-array-based UV photoconductive sensor has the highest photocurrent value of     2.43     ×     10 - 4  A. The high photocurrent is due to the high concentration of zinc (Zn) interstitials in the vacuum-annealed nanorod arrays. In contrast, the oxygen-annealing process applied to the Al-doped ZnO nanorod arrays produced highly sensitive UV photoconductive sensors, in which the sensitivity reached 55.6, due to the surface properties of the oxygen-annealed nanorods, which have a higher affinity for oxygen adsorption than the other samples and were thereby capable of reducing the sensor’s dark current. In addition, the sensor fabricated using the oxygen-annealed nanorod arrays had the lowest rise and decay time constants. Our result shows that the annealing environment greatly affects the surface condition and properties of the Al-doped ZnO nanorod arrays, which influences the performance of the UV photoconductive sensors.
    Type of Medium: Online Resource
    ISSN: 1687-4110 , 1687-4129
    Language: English
    Publisher: Hindawi Limited
    Publication Date: 2012
    detail.hit.zdb_id: 2229480-6
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  • 3
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2011
    In:  Advanced Materials Research Vol. 364 ( 2011-10), p. 149-153
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 364 ( 2011-10), p. 149-153
    Abstract: Transparent nanoparticles ZnO thin films have been deposited on glass substrates using sol-gel spin coating technique. 0.35M sol were prepared by dissolving zinc acetate dehydrate in 2-methoxyethanol with monoethanolamine as the stabilizer. In this paper, a novel method called layer-by-layer is introduced, where the thin film is not only dried after each layer is spin-coated, but also directly annealed at 500°C to improve the electrical and optical properties of the films. Samples without annealing were also prepared as the reference sample. ZnO thin films were characterized using current-voltage measurement, UV-Vis spectroscopy and photoluminescence spectroscopy. The results revealed that layer-by-layer ZnO thin films have lower resistivity compared to the reference samples with a maximum value of 0.77Ω.cm for ZnO films deposited with 2 layers. Transmittance spectra show that the films were transparent in the visible range above 400nm with range of 86%-98% for the layer-by-layer ZnO films. The optical band gaps were between 3.2 to 3.3eV for both layer-by-layer and the reference samples. PL spectra indicate that layer-by-layer method improves the crystallinity of the films.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2011
    detail.hit.zdb_id: 2265002-7
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  • 4
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 1024 ( 2014-8), p. 60-63
    Abstract: This paper reports the results of zinc oxide (ZnO) nanostructure growth on different types of metal catalysts, namely gold and platinum, and also the effect of annealing time of the metal catalysts prior to the deposition of ZnO nanostructures. The metal catalysts layers with 15 nm thickness were deposited on glass substrates by sputter coater and then annealed in air ambient for 15 and 30 min at 500 °C. ZnO nanostructure was then deposited on the metal catalysts by thermal chemical vapour deposition (TCVD) method. We found that the Au catalyst morphologies varied with the annealing time, and the growth morphology of the ZnO followed the morphology of the Au catalyst. The morphology of the metal catalysts and ZnO nanostructures were characterized using field emission scanning electron microscopy (FESEM). The grown ZnO nanostructures were tested for their ability for extended gate field effect transistor (EGFET) sensor application. The samples were attached to the gate of an NFET and were dipped in acid and alkali buffer solutions while the gate voltage was measured. We found that the extended gate gave different voltage in buffer solutions with different pH which indicated that the samples can act as the extended gate of an EGFET sensor.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2014
    detail.hit.zdb_id: 2265002-7
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  • 5
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2014
    In:  Advanced Materials Research Vol. 925 ( 2014-4), p. 120-124
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 925 ( 2014-4), p. 120-124
    Abstract: This paper reports on the effects of gold (Au) catalyst on the growth of zinc oxide (ZnO) nanostructures by thermal chemical vapor deposition (TCVD). The thickness of Au catalyst was varied from 5 to 15 nm. The Au catalyst was annealed at 500 °C prior to the deposition of ZnO nanostructures by thermal chemical vapor deposition (TCVD). The morphology of the Au catalyst at different thickness and also ZnO nanostructures were characterized by field emission scanning electron microscopy (FESEM). The material component and crystalline properties of ZnO nanostructures were determined using Energy Dispersive X-ray spectroscopy (EDX) and also Raman Spectroscopy respectively. We found that the shape of the deposited ZnO nanostructures were different on different thickness of Au catalyst. There was no growth of ZnO on the 5 nm thick Au observed by FESEM and supported by EDX due to very small amount of Zn. On the 10 and 15 nm thick Au, growth of ZnO nanostructures were clearly observed.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2014
    detail.hit.zdb_id: 2265002-7
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  • 6
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 832 ( 2013-11), p. 429-433
    Abstract: We investigated the growth of zinc oxide (ZnO) nanotetrapods on a crystallized ZnO seed layer. The seed layer was deposited by RF magnetron sputtering and etched by HF solution before the deposition of ZnO nanotetrapods by thermal chemical vapor deposition. The HF etching was done to roughen the seed layer surface to facilitate the nucleation sites for the nanostructures growth. We found that the shapes of the nanostructures on the HF-etched seed layers and those on un-etched seed layer are different, in which the nanostructures on the etched layers are in the form of plates with needles grown at the edge, whereas the nanostructures on the un-etched layers are in the shape of typical nanotetrapods. This is believed to be the result of different growth mechanisms associated with the different conditions of the growth surface.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
    detail.hit.zdb_id: 2265002-7
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  • 7
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 832 ( 2013-11), p. 670-674
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 832 ( 2013-11), p. 670-674
    Abstract: ZnO in various nanostructures forms have been widely studied for the application such as in solar cells, light emitting diodes, UV sensors and so on. In this paper, we have successfully deposited ZnO nanotetrapods using thermal chemical vapour deposition (TCVD) technique on layer-by-layer ZnO seeded catalyst, with Zn powder and O 2 gas as source materials. We demonstrate that by using double furnace TCVD system, ZnO nanotetrapods can be deposited at lower temperature than the vapour temperature of the Zn powder. In this paper we report the effect of different deposition temperature (450 °C to 600 °C) on the surface morphologies, crystalline structure and optical properties of the ZnO nanotetrapods. FE-SEM micrographs show that the length of the nanotetrapods arms decreases with the increase of the deposition temperature. PL spectra show that the visible emission are very low compared to the UV emission which indicates that the ZnO tetrapod have very low intrinsic defect. The highest UV emission intensity is given by the sample deposited at 500 °C.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
    detail.hit.zdb_id: 2265002-7
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  • 8
    Online Resource
    Online Resource
    Trans Tech Publications, Ltd. ; 2013
    In:  Advanced Materials Research Vol. 667 ( 2013-3), p. 338-342
    In: Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 667 ( 2013-3), p. 338-342
    Abstract: ZnO heterostructures have been successfully synthesized using thermal chemical vapor deposition method. Zinc powder and oxygen were used as the starting materials, while argon gas was supplied as the carrier gas. Different types of nanostructures were deposited on layer-by-layer ZnO seeded catalyst; which its structures depended on the position of the substrates during the deposition process. Substrates at position C which is located 3 cm from the source shows uniformly distributed ZnO nanorods. XRD pattern also shows that sample C shows (0 0 2) diffraction peak. PL spectra indicates that the ZnO have two peaks, which is UV peak centered at 380 nm and visible peak centered at about 550 nm.
    Type of Medium: Online Resource
    ISSN: 1662-8985
    URL: Issue
    Language: Unknown
    Publisher: Trans Tech Publications, Ltd.
    Publication Date: 2013
    detail.hit.zdb_id: 2265002-7
    Location Call Number Limitation Availability
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