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  • 1
    Online Resource
    Online Resource
    Electrochemically deposited gallium oxide nanostructures on silicon substrates
    Springer Science and Business Media LLC ; 2014
    In:  Nanoscale Research Letters Vol. 9, No. 1 ( 2014-12)
    Details
    In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
    Abstract: We report a synthesis of β-Ga 2 O 3 nanostructures on Si substrate by electrochemical deposition using a mixture of Ga 2 O 3 , HCl, NH 4 OH, and H 2 O. The presence of Ga 3+ ions contributed to the deposition of Ga 2 O 3 nanostructures on the Si surface with the assistance of applied potentials. The morphologies of the grown structures strongly depended on the molarity of Ga 2 O 3 and pH level of electrolyte. β-Ga 2 O 3 nanodot-like structures were grown on Si substrate at a condition with low molarity of Ga 2 O 3 . However, Ga 2 O 3 nanodot structures covered with nanorods on top of their surfaces were obtained at higher molarity, and the densities of nanorods seem to increase with the decrease of pH level. High concentration of Ga 3+ and OH - ions may promote the reaction of each other to produce Ga 2 O 3 nanorods in the electrolyte. Such similar nature of Ga 2 O 3 nanorods was also obtained by using hydrothermal process. The grown structures seem to be interesting for application in electronic and optoelectronic devices as well as to be used as a seed structure for subsequent chemical synthesis of GaN by thermal transformation method.
    Type of Medium: Online Resource
    ISSN: 1556-276X
    URL: Article
    DOI: 10.1186/1556-276X-9-120
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2014
    detail.hit.zdb_id: 2253244-4
    detail.hit.zdb_id: 3149496-1
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  • 2
    Online Resource
    Online Resource
    Synthesis of zinc oxide nanostructures on graphene/glass substrate by electrochemical deposition: effects of current density and temperature
    Springer Science and Business Media LLC ; 2014
    In:  Nanoscale Research Letters Vol. 9, No. 1 ( 2014-12)
    Details
    In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
    Abstract: The electrochemical growth of zinc oxide (ZnO) nanostructures on graphene on glass using zinc nitrate hexahydrate was studied. The effects of current densities and temperatures on the morphological, structural, and optical properties of the ZnO structures were studied. Vertically aligned nanorods were obtained at a low temperature of 75°C, and the diameters increased with current density. Growth temperature seems to have a strong effect in generating well-defined hexagonal-shape nanorods with a smooth top edge surface. A film-like structure was observed for high current densities above -1.0 mA/cm 2 and temperatures above 80°C due to the coalescence between the neighboring nanorods with large diameter. The nanorods grown at a temperature of 75°C with a low current density of -0.1 mA/cm 2 exhibited the highest density of 1.45 × 10 9  cm -2 . X-ray diffraction measurements revealed that the grown ZnO crystallites were highly oriented along the c -axis. The intensity ratio of the ultraviolet (UV) region emission to the visible region emission, I UV / I VIS , showed a decrement with the current densities for all grown samples. The samples grown at the current density below -0.5 mA/cm 2 showed high I UV / I VIS values closer to or higher than 1.0, suggesting their fewer structural defects. For all the ZnO/graphene structures, the high transmittance up to 65% was obtained at the light wavelength of 550 nm. Structural and optical properties of the grown ZnO structures seem to be effectively controlled by the current density rather than the growth temperature. ZnO nanorod/graphene hybrid structure on glass is expected to be a promising structure for solar cell which is a conceivable candidate to address the global need for an inexpensive alternative energy source.
    Type of Medium: Online Resource
    ISSN: 1556-276X
    URL: Article
    DOI: 10.1186/1556-276X-9-609
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2014
    detail.hit.zdb_id: 2253244-4
    detail.hit.zdb_id: 3149496-1
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  • 3
    Online Resource
    Online Resource
    Electrodeposited Germanium On Silicon Substrate Using A Mixture Of Germanium Tetrachloride And Propylene Glycol
    Penerbit UTM Press ; 2014
    In:  Jurnal Teknologi Vol. 72, No. 1 ( 2014-12-29)
    Details
    In: Jurnal Teknologi, Penerbit UTM Press, Vol. 72, No. 1 ( 2014-12-29)
    Abstract: We report the deposition of germanium (Ge) film on silicon (Si) substrate by a simple and low cost electrochemical deposition using a mixture of germanium tetrachloride (GeCl4) and propylene glycol (C3H8O2). The effects of deposition environment and applied current density on the properties of deposited Ge films were investigated. Ge film containing germanium dioxide (GeO2) microclusters was obtained for deposition in air-exposed environment while high purity Ge film with no impurity detectable by energy-dispersive x-ray spectroscopy (EDS) was obtained in nitrogen (N2) filled environment. In Raman spectra, N2 exposed sample shows smaller full width at half maximum (FWHM) values of Ge-Ge peak compared to air exposed sample, thereby indicating better crystallinity of Ge. Relatively flat and smooth Ge surfaces with the average roughnesses of 0.828-1.069 nm were obtained for all tested current densities of 10, 20 and 60 mAcm-2. The mean Ge crystallite grain sizes were determined to be in the range of 2-4 nm. In qualitative voltammetry study, two reduction peaks were observed in cyclic voltammograms measurement which confirms that the deposition of Ge at cathode occurs via two reduction processes. It is expected that the impurity-free Ge film on Si is promising for various device application towards heterogeneous integration on Si platform.
    Type of Medium: Online Resource
    ISSN: 2180-3722 , 0127-9696
    URL: Article
    DOI: 10.11113/jt.v72.3225
    Language: Unknown
    Publisher: Penerbit UTM Press
    Publication Date: 2014
    detail.hit.zdb_id: 2780014-3
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  • 4
    Online Resource
    Online Resource
    Seed/catalyst-free vertical growth of high-density electrodeposited zinc oxide nanostructures on a single-layer graphene
    Springer Science and Business Media LLC ; 2014
    In:  Nanoscale Research Letters Vol. 9, No. 1 ( 2014-12)
    Details
    In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
    Abstract: We report the seed/catalyst-free vertical growth of high-density electrodeposited ZnO nanostructures on a single-layer graphene. The absence of hexamethylenetetramine (HMTA) and heat has resulted in the formation of nanoflake-like ZnO structure. The results show that HMTA and heat are needed to promote the formation of hexagonal ZnO nanostructures. The applied current density plays important role in inducing the growth of ZnO on graphene as well as in controlling the shape, size, and density of ZnO nanostructures. High density of vertically aligned ZnO nanorods comparable to other methods was obtained. The quality of the ZnO nanostructures also depended strongly on the applied current density. The growth mechanism was proposed. According to the growth timing chart, the growth seems to involve two stages which are the formation of ZnO nucleation and the enhancement of the vertical growth of nanorods. ZnO/graphene hybrid structure provides several potential applications in electronics and optoelectronics such as photovoltaic devices, sensing devices, optical devices, and photodetectors.
    Type of Medium: Online Resource
    ISSN: 1556-276X
    URL: Article
    DOI: 10.1186/1556-276X-9-95
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2014
    detail.hit.zdb_id: 2253244-4
    detail.hit.zdb_id: 3149496-1
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  • 5
    Online Resource
    Online Resource
    High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature
    Springer Science and Business Media LLC ; 2015
    In:  Nanoscale Research Letters Vol. 10, No. 1 ( 2015-12)
    Details
    In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 10, No. 1 ( 2015-12)
    Abstract: Hydrothermal zinc oxide (ZnO) thick films were successfully grown on the chemical vapor deposition (CVD)-grown thick ZnO seed layers on a -plane sapphire substrates using the aqueous solution of zinc nitrate dehydrate (Zn(NO 3 ) 2 ). The use of the CVD ZnO seed layers with the flat surfaces seems to be a key technique for obtaining thick films instead of vertically aligned nanostructures as reported in many literatures. All the hydrothermal ZnO layers showed the large grains with hexagonal end facets and were highly oriented towards the c -axis direction. Photoluminescence (PL) spectra of the hydrothermal layers were composed of the ultraviolet (UV) emission (370 to 380 nm) and the visible emission (481 to 491 nm), and the intensity ratio of the former emission ( I UV ) to the latter emission ( I VIS ) changed, depending on both the molarity of the solution and temperature. It is surprising that all the Hall mobilities for the hydrothermal ZnO layers were significantly larger than those for their corresponding CVD seed films. It was also found that, for the hydrothermal films grown at 70°C to 90°C, the molarity dependences of I UV / I VIS resembled those of mobilities, implying that the mobility in the film is affected by the structural defects. The highest mobility of 166 cm 2 /Vs was achieved on the hydrothermal film with the carrier concentration of 1.65 × 10 17 cm −3 grown from the aqueous solution of 40 mM at 70°C.
    Type of Medium: Online Resource
    ISSN: 1931-7573 , 1556-276X
    URL: Article
    DOI: 10.1186/s11671-014-0715-0
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2015
    detail.hit.zdb_id: 2253244-4
    detail.hit.zdb_id: 3149496-1
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  • 6
    Online Resource
    Online Resource
    Seedless growth of zinc oxide flower-shaped structures on multilayer graphene by electrochemical deposition
    Springer Science and Business Media LLC ; 2014
    In:  Nanoscale Research Letters Vol. 9, No. 1 ( 2014-12)
    Details
    In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
    Abstract: A seedless growth of zinc oxide (ZnO) structures on multilayer (ML) graphene by electrochemical deposition without any pre-deposited ZnO seed layer or metal catalyst was studied. A high density of a mixture of vertically aligned/non-aligned ZnO rods and flower-shaped structures was obtained. ML graphene seems to generate the formation of flower-shaped structures due to the stacking boundaries. The nucleation of ZnO seems to be promoted at the stacking edges of ML graphene with the increase of applied current density, resulting in the formation of flower-shaped structures. The diameters of the rods/flower-shaped structures also increase with the applied current density. ZnO rods/flower-shaped structures with high aspect ratio over 5.0 and good crystallinity were obtained at the applied current densities of −0.5 and −1.0 mA/cm 2 . The growth mechanism was proposed. The growth involves the formation of ZnO nucleation below 80°C and the enhancement of the growth of vertically non-aligned rods and flower-shaped structures at 80°C. Such ZnO/graphene hybrid structure provides several potential applications in sensing devices.
    Type of Medium: Online Resource
    ISSN: 1556-276X
    URL: Article
    DOI: 10.1186/1556-276X-9-337
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2014
    detail.hit.zdb_id: 2253244-4
    detail.hit.zdb_id: 3149496-1
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  • 7
    Online Resource
    Online Resource
    Growth of uniform carbon thin film containing nanocrystalline graphene clusters from evaporated palm oil by thermal chemical vapor deposition
    IOP Publishing ; 2014
    In:  Japanese Journal of Applied Physics Vol. 53, No. 7 ( 2014-07-01), p. 075101-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 7 ( 2014-07-01), p. 075101-
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.7567/JJAP.53.075101
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 8
    Online Resource
    Online Resource
    Seed/catalyst-free growth of zinc oxide nanostructures on multilayer graphene by thermal evaporation
    Springer Science and Business Media LLC ; 2014
    In:  Nanoscale Research Letters Vol. 9, No. 1 ( 2014-12)
    Details
    In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
    Abstract: We report the seed/catalyst-free growth of ZnO on multilayer graphene by thermal evaporation of Zn in the presence of O 2 gas. The effects of substrate temperatures were studied. The changes of morphologies were very significant where the grown ZnO structures show three different structures, i.e., nanoclusters, nanorods, and thin films at 600°C, 800°C, and 1,000°C, respectively. High-density vertically aligned ZnO nanorods comparable to other methods were obtained. A growth mechanism was proposed based on the obtained results. The ZnO/graphene hybrid structure provides several potential applications in electronics and optoelectronics.
    Type of Medium: Online Resource
    ISSN: 1556-276X
    URL: Article
    DOI: 10.1186/1556-276X-9-83
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2014
    detail.hit.zdb_id: 2253244-4
    detail.hit.zdb_id: 3149496-1
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