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    Publication Date: 2015-12-29
    Description: A study of the activation of the light-induced degradation in compensated n -type Czochralski grown silicon is presented. A kinetic model is established that verifies the existence of both the fast and the slow components known from p -type and proves the quadratic dependence of the defect generation rates of both defects on the hole concentration. The model allows for the description of lifetime degradation kinetics in compensated n -type silicon under various intensities and is in accordance with the findings for p -type silicon. We found that the final concentrations of the slow defect component in compensated n -type silicon only depend on the interstitial oxygen concentration and on neither the boron concentration nor the equilibrium electron concentration n 0 . The final concentrations of the fast defect component slightly increase with increasing boron concentration. The results on n -type silicon give new insight to the origin of the BO defect and question the existing models for the defect composition.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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