ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The carrier recombination activities of small angle (SA) grain boundaries (GBs) inmulticrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current(EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0-10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showedstrong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBICcontrast were discussed in terms of boundary dislocations
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.9.pdf