Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Review of Scientific Instruments
61 (1990), S. 2211-2213
ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of 〉800 V into 50 Ω with rise times of approximately 3 ns. The output pulse amplitude can be varied by adjusting the drain-source voltage of the power MOSFET. The trigger delay of this circuit is approximately 5 ns, with jitter of 〈100 ps. This circuit has been used to generate pulses at a repetition rate of greater than 1 kHz.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1141391
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