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A mathematical study of general analytical models for step p-n semiconductor junctions (1985)

Ruan, Ying-Chao ; Paranjape, B. V. ; Tang, Jing-Qing

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 2662-2671

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Three generalized models covering a wide range of ionized impurity densities, NA and ND, have been put forward for undegenerate semiconductor step p-n junctions at equilibrium. They contain the exact electric field and the potential at the interface of a junction, and give a satisfactory field distribution and potential distribution. In limiting cases they reduce to the traditional depletion model given by Shockley and the one-side junction model by van de Wiele and Demoulin. The proposed models can be applied to low-injection junctions. The electric field and the potential as functions of position given in this paper can also be used in other step junctions.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335900

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