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Initial stages of epitaxial growth of GaAs on (100) silicon (1987)

Biegelsen, D. K. ; Ponce, F. A. ; Smith, A. J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 1856-1859

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Direct observations of early stages of molecular-beam epitaxial growth of GaAs on oriented and vicinal (100) Si surfaces are presented. Cross-sectional transmission electron microscopy and plan view scanning electron microscopy images directly reveal three-dimensional island growth for substrate temperatures above 300 °C. Island size, island spacing, surface morphology, and stacking fault defect spacing all increase with substrate temperature for fixed Ga and As fluxes. Below 300 °C, 7-nm-thick films are continuous and uniform. Films deposited on surfaces tilted from (100) coalesce anisotropically with respect to the tilt axis.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.338029

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