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Shock-wave effect on the electron-hole plasma in CdSe (1988)

Garuthara, R. ; Lu, X. Z. ; Lee, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 3737-3739

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Picosecond laser pulses were utilized to generate shock waves in a cadmium selenide (CdSe) semiconductor. A pump-and-probe technique was used to study the shock pressure effects on the carriers in CdSe by measuring the photoluminescence emission. A blue shift was observed in the photoluminescence peak position under shock-wave loading. By varying the delay time of the probe pulse with respect to the pump pulse, a shock pressure profile in time was monitored. By analyzing the high-energy tail of electron-hole plasma photoluminescence spectra, the average hot-electron temperatures were deduced for both shocked and unshocked emission. Under shock loading conditions, an increase in the average hot-electron temperature was observed to remain over 20 ns.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341371

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