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Study of molecular-beam epitaxially grown GexSi1−x/Si layers by Raman scattering (1988)

Chang, S. J. ; Kallel, M. A. ; Wang, K. L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 3634-3636

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The strain distribution of a GexSi1−x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick GexSi1−x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341401

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