ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose using pseudomorphic multilayers of InGaAs, GaAs, and AlGaAs in optical mirrors for near-infrared devices including surface-emitting lasers, bistable optical devices, and optical modulators. We demonstrate the growth of a Fabry–Perot etalon by molecular-beam epitaxy and characterize it optically (reflectance, transmittance, photoluminescence) and structurally (scanning electron microscopy and dislocation imaging). We find the optical characteristics of the etalon as a whole and the individual quarter-wave layers indicate high structural quality for the mirrors. This is in spite of the fact that the lattice constant of the etalon structure is slightly relaxed from that of the GaAs substrate. These results indicate that pseudomorphic mirrors are useful candidates for integrated optical devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342553
