ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Unintentionally doped GaAs crystals grown by the horizontal Bridgman method were annealed at temperatures in the range from 700 to 910 °C under As overpressure. The n-type crystals subjected to heat treatment under As overpressure lower than the growing pressure revealed a conductivity-type conversion to p type. The electrical conductivity, Hall coefficient, and photoionization cross sections were measured on the p-type samples, and the resulting analysis indicates that the conversion center is a double acceptor, most probably associated with CuGa defect. The activation energies attributable to the singly and doubly ionized states of the acceptor were found to be ∼150 and ∼380 meV at 0 K, respectively. The doubly ionized acceptor states turned out to provide strong space-charge scattering, which plays a crucial role in determining the hole behavior in the present material at high temperatures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343234
