Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 1658-1661
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
X-ray diffraction spectra and the electrical properties of bulk InP and InGaAs have been obtained in quenched samples after compressing them into metallic phases above 14 GPa. The x-ray diffraction spectrum of InP was similar to that of the zinc-blende phase, although the [200] reflection was missing and an extra line was observed near the [220] reflection. Transport measurements showed about three orders of magnitude decrease in carrier concentration from 1016 cm−3 before pressurization to 1013 cm−3 after pressurization. The electron mobility was similar to that found for X-conduction-band minima, and the resistivity was increased by about four orders of magnitude. The photoconductivity edge of the band-to-band absorption was quenched.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344381
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