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Optical properties of GaAs/GaP strained-layer superlattices (1990)

Recio, M. ; Armelles, G. ; Meléndez, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 2044-2050

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The optical properties of a novel system, the GaAs/GaP strained-layer superlattice, are studied and compared with a theoretical model. Photoluminescence and photoreflectance measurements revealed that among the set of superlattices under study type-I and type-II behaviors (similar to those found in the lattice-matched GaAs/AlAs system) are present. The evolution of the photoluminescence peaks as a function of temperature and excitation density supported the assignment of the transitions involved. This is to our knowledge the first observation of direct (type-I) and indirect (type-II) transitions in strained-layer superlattices. A comparison with a theoretical model has led to an estimation of the conduction-band offset as 0.4 eV, which is the first value obtained from experiment in a GaAs/GaP heterojunction.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345588

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