Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 530-532
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350694
|
Location |
Call Number |
Limitation |
Availability |