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Current-frequency characteristics of submicrometer GaAs Schottky barrier diodes with femtofarad capacitance (1992)

Roeser, H. P. ; Titz, R. U. ; Schwaab, G. W. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 3194-3197

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: At room temperature different GaAs Schottky barrier diodes with submicrometer structure and ∼fF capacitance C have been investigated in a heterodyne receiver. Using microwave sources and submillimeter lasers as the local oscillator (LO) they show that the number of electrons Ne passing through the Schottky contact each LO cycle is constant and is a characteristic value for each diode type. This is expressed by the experimentally derived equation for the optimum current I=Ne eν (e is the electronic charge and ν the frequency of the radiation). The required optimum LO voltage amplitude VLO is independent of operating frequency and fulfills the equation VLO=(Ne e)/2C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351482

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