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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6645-6654 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical model for optically triggered switching in bulk GaAs is presented. First, a one-dimensional model is described and calculated behavior compared to experimental observations. Results from the one-dimensional model are not consistent with observed switching behavior. The model is then modified to include filament formation. Results from the modified model agree qualitatively and quantitatively with experimental data. Details of the dynamic behavior of the device are shown and a unified picture of the switching phenomenon presented. On the basis of the agreement of the numerical model and experimental observation it is concluded that switching is a result of localized impact ionization creating a conductive filament channel through the bulk material.
    Type of Medium: Electronic Resource
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