Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 6645-6654
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A numerical model for optically triggered switching in bulk GaAs is presented. First, a one-dimensional model is described and calculated behavior compared to experimental observations. Results from the one-dimensional model are not consistent with observed switching behavior. The model is then modified to include filament formation. Results from the modified model agree qualitatively and quantitatively with experimental data. Details of the dynamic behavior of the device are shown and a unified picture of the switching phenomenon presented. On the basis of the agreement of the numerical model and experimental observation it is concluded that switching is a result of localized impact ionization creating a conductive filament channel through the bulk material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355107
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