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Modeling of InGaAs/InAlAs coupled double quantum wells (1994)

Chin, M. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 518-523

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A symmetric coupled double-quantum-well (CDQW) structure in InGaAs/InAlAs lattice matched to InP can give enhanced Stark effects for electroabsorption modulation near 1.3 μm. The optical features of this material are the dramatic quenching of the heavy-hole exciton and the simultaneous emergence of the normally forbidden higher-order transitions. An effective-mass model for the double-quantum-well structure yields predictions in good agreement with experimental results. The model can be used to predict the optical properties of not only symmetric CDQWs but also asymmetric structures as well.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357104

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