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Diffuse x-ray scattering from misfit dislocations in SiGe epitaxial layers with graded Ge content (1995)

Holý, V. ; Li, J. H. ; Bauer, G. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 5013-5021

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A theory has been developed describing x-ray diffuse scattering from misfit dislocations in epitaxial layers. This approach has been used for explaining the origins of diffuse x-ray scattering from SiGe layers with linearly graded Ge content. The distribution of the diffusely scattered intensity in reciprocal plane measured by triple-axis x-ray diffractometry has been compared with theoretical predictions and a good agreement has been achieved. It is demonstrated that the main part of the diffusely scattered intensity originates from random strains caused by misfit dislocations at the substrate–epilayer interface or in the relaxed part of the compositionally graded layers. The contribution of the threading dislocation segments to the diffuse scattering is rather small. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359728

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