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Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks (1996)

Voss, M. ; Lier, C. ; Menzel, U. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 1170-1172

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Laser radiation from GaAs/AlGaAs laser diode arrays of high output power is studied during nano- to millisecond carrier injection in temporally and spectrally resolved emission measurements. A red shift of the multimode emission spectrum by up to 12 nm and a concomitant increase of the total bandwidth are caused by a transient rise of the device temperature by up to 50 K. Spatially resolved experiments reveal a lateral temperature difference of about 2 K between the center and the edge emitters. Different laser array/heat sink combinations are investigated in order to reduce the transient temperature increase. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360900

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