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Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing (1996)

Malin, J. I. ; Liu, P. ; Sengupta, D. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 4737-4740

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple-quantum-well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by dielectric encapsulating (SiO2 or Si3N4) the surface. The high dark current of annealed QWIPs is attributed to dopant out-diffusion from the QWs into the barriers. Declining responsivities result from reduced carrier density in the QW and a red shift of the intersubband transition energy. In this work, the intersubband energy is determined by the Fourier synthesis model and compared with experimental results (further confirming the interdiffusion mechanism). Minimal dark current and responsivity degradation is observed for Si3N4-encapsulated QWIPs red shifted by 1 μm © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.363456

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