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Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide (1997)

Kawarada, H. ; Wild, C. ; Herres, N. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 3490-3493

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.365047

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