Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 6056-6061
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850 °C and 1100 °C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.364453
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