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Anisotropic interfacial strain in InP/InGaAs/InP quantum wells (1998)

Lakshmi, B. ; Cassidy, Daniel T. ; Robinson, B. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 5739-5742

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga–P, Ga–As, and In–As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.368839

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