Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 2565-2570
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368439
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