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Effect of nitrogen on the band structure of GaInNAs alloys (1999)

Shan, W. ; Walukiewicz, W. ; Ager, J. W.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 2349-2351

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371148

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