Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 5490-5492
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on ultrahigh-transparency and low-resistance Ni/Au ohmic contacts to surface-treated p-GaN:Mg (3.6×1017 cm−3). It is shown that annealing at 500 °C for 1 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 5.0(±1.0)×10−3 and 2.5(±1.0)×10−3 Ω cm2 for the as-deposited and annealed samples, respectively. It is also shown that the light transmittance is 90.3(±0.6) and 97.3(±0.8) % (at 470 nm) for the as-deposited and annealed contacts, respectively. Furthermore, the surface of the annealed contact is found to be fairly smooth with a root-mean-square roughness of 0.84 nm. These results are compared with those previously reported for the Ni/Au contacts. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1312832
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