Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 2104-2106
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a theoretical treatment of surface–field THz generation in semiconductors, which explains the power enhancement observed when a magnetic field is applied. Our model consists of two parts: a Monte Carlo simulation of the dynamics of carriers generated by a subpicosecond optical pulse, and a calculation of the resulting THz radiation emitted through the semiconductor surface. The magnetic field deflects the motion of the carriers, producing a component of the THz dipole parallel to the surface. This causes the power transmitted through the surface to be increased by more than one order of magnitude. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1433187
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