GLORIA — GEOMAR Library Ocean Research Information Access

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Raman scattering in GaN pillar arrays (2002)

Demangeot, F. ; Gleize, J. ; Frandon, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 2866-2869

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We present a detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) spectroscopy. AFM is used to characterize the shape of the GaN pillars and revealed a large roughness of etched pillar surfaces. Raman scattering spectra of the pillars are well described by angular dispersion of polar optical phonons induced by the three-dimensional shape of the pillar. Additional Raman scattering has been tentatively assigned to the activation of the high frequency B1 silent mode by defects introduced during the ion etching. This result is well correlated with the appearance of donor and acceptor-related PL of the GaN pillars. N vacancy or/and Ga interstitials would be likely candidates for donors in the nonstoichiometric GaN near the surface of the etched pillars. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1445492

	Location	Call Number	Limitation	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit