Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 5072-5078
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide access to nonequilibrium minority carrier lifetimes that determine the current gains of those devices. By systematically studying transient luminescence spectra over a wide range of excitation densities between 1013 and 1018 cm−3, we demonstrate the importance of carrier trapping processes at low excitation densities. Optimized excitation conditions that achieve trap saturation but also avoid stimulated emission are found for densities of (1–3)×1017 cm−3/pulse. Detection is limited to a spectral window well above the energy gap (beyond 1.5 eV). Values for both Auger and radiative recombination coefficients are given. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1456244
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