Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 51-53
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the first observation of the self-electro-optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a modulation convertor, which converts a modulation from a carrier at 1.6 μm onto a carrier at 0.85 μm and vice versa.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99315
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