Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 804-806
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A solid phase epitaxy technique has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (103 cm−2 detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550–600 °C. CoSi2 films grown without the Si cap are found to have pinhole densities of 107–108 cm−2 when annealed at similar temperatures. A CF4 plasma etching technique was used to increase the visibility of the pinholes in the silicide layer. This plasma technique extends the pinhole detection resolution to 103 cm−2 and is independent of the pinhole size.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99289
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