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High-mobility variable-density two-dimensional electron gas in inverted GaAs-AlGaAs heterojunctions (1988)

Meirav, U. ; Heiblum, M. ; Stern, Frank

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 1268-1270

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Inverted heterointerfaces (GaAs on AlGaAs), which are basic constituents of all quantum wells and superlattices, have been significantly improved using electron diffraction and a refined molecular beam epitaxy growth procedure. Utilizing them in a novel structure allowed the variation of the electron density over a wide range, with peak mobilities of 4×105 cm2/V s. The continuously variable electron density allowed comparison to a theoretical analysis of the low-temperature scattering mechanisms, and their relation to the growth process, establishing the importance of interface charges and roughness. High-mobility samples were used to observe the quantum Hall effect with varying carrier concentrations in a single structure.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99176

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