Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 222-224
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100137
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