ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Micron-sized loops of high-mobility two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures using a novel split-gate technique. Aharonov–Bohm oscillations of amplitude up to 20% of the device resistance have been observed at very low temperatures (T〈100 mK), together with h/2e oscillations which appear to be due to interference between pairs of time-reversed paths near B=0. The h/e period is found to vary by ∼25% with magnetic field, possibly as a result of the formation of edge states. In the quantum Hall effect, plateaus in Rxx are seen at high B due to variations in carrier concentration across the ring, which may cause backscattering of some edge states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100818