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Band-edge discontinuities of strained-layer InxGa1−xAs/GaAs heterojunctions and quantum wells (1989)

Niki, S. ; Lin, C. L. ; Chang, W. S. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 1339-1341

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The conduction-band discontinuity (ΔEc ) and the band-gap offset (ΔEgh) of InxGa1−xAs/GaAs multiple quantum wells grown on GaAs substrates by molecular beam epitaxy are investigated for 0〈x〈0.3. The band gap of strained InxGa1−xAs , determined from the excitonic transition of room-temperature transmission spectra, is found to be linearly dependent on x and is in good agreement with the calculated values. The band-gap offset is found to be ΔEgh =1.15x eV. The conduction-band offset, compiled from published data, is ΔEc =0.75x eV, and thus (ΔEc /ΔEgh)=0.65 independent of x.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101649

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