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Schottky barrier contacts on defect-free GaAs (110) (1990)

Liliental-Weber, Zuzanna ; Weber, E. R. ; Washburn, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 2507-2509

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High resolution transmission electron microscopy and analytical electron microscopy show direct evidence for defect-free interfaces produced by in situ cluster deposition of Au, Ag, and Ti onto ultrahigh vacuum-cleaved n-GaAs. In contrast to interfaces produced by atom-by-atom deposition, no specific interface reconstruction or orientation relationship and no change of stoichiometry of the GaAs near the interface was observed. Schottky barrier heights correspond to unusual Fermi level pinning positions in the upper half of the GaAs band gap, in clear contrast to values obtained for atom deposition and for diodes prepared by standard technology on GaAs (100). These results give clear evidence that Fermi level pinning for metal/GaAs interfaces formed without defects does not follow the predictions of current metal-induced gap-state models.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102873

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