Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 475-477
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electroabsorption of strained-layer Inx Ga1−x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor materials, and suggest that the widths of ground-state electron and hole minibands might be larger than the maximum tilt of the potential well caused by an applied voltage. We attribute the electroabsorption of such superlattices to photon-assisted tunneling between ground-state electron and heavy hole minibands.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102770
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