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Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy (1990)

Xie, Q. H. ; Fung, K. K. ; Ding, A. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 2803-2805

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The distribution of microtwins in GaAs epilayer grown on Si (001) substrates tilted towards the [1¯11] direction by molecular beam epitaxy has been studied by transmission electron microscopy. An asymmetric distribution of microtwins attributed to substrate misorientation and two-dimensional (2D) growth mode has been found. Orthogonal [1¯10] and [110] cross sections are identified by the angle of tilt in large-angle convergent beam electron diffraction Tanaka patterns [J. Electron. Microsc. 29, 408 (1980)] taken across the GaAs/Si interface. It is found that (11¯1) microtwins are preferentially grown in GaAs epilayers on a tilted Si (001) substrate where the growth mode is 2D, while symmetrical (1¯1¯1) and (111) twins are observed when there is a reversal of twin distribution and the growth mode is 3D.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103792

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