ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A surface conductivity-type inversion has been observed following low-energy (400 eV), high-dose, hydrogen implantation of p-type silicon. Detailed structural, chemical, and electrical examination of the surface revealed that the inversion resulted from hydrogen forming n-type complexes with extended defects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105040