Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2057-2059
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have demonstrated continuous-wave, room-temperature, photopumped operation of a vertical-cavity surface-emitting laser having a 0.8% lattice mismatch with its GaAs substrate. Such mismatch provides flexibility in designing resonators with new lasing wavelengths. The laser resonator comprises lattice-matched In0.12Ga0.88As and In0.10Al0.90As quarter-wave layers for mirrors and a strained-layer superlattice of In0.23Ga0.77As/Al0.35Ga0.65As for an active region. The structure lases in the range 1.05–1.10 μm under continuous-wave photoexcitation in the wavelength range 900–950 nm. The differential power efficiency is as high as 68% and the threshold is 2 kW/cm2 (1.8 kA/cm2 injection current-density equivalent). Dislocation line densities observed by photoluminescence microscopy are about 6×102/cm in both the active region and the uppermost mirror layers. The lines predominate along one 〈110〉 direction along which the laser light is preferentially polarized. These observations suggest a way of polarizing surface-emitting lasers by intentional patterning of grating lines on the wafer surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107088
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