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Annealing characteristics and thermal stability of electron beam evaporated ruthenium Schottky contacts to n-GaAs (1992)

Myburg, G. ; Auret, F. D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 604-606

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High quality ruthenium Schottky barrier diodes were fabricated on epitaxially grown n-GaAs, by the electron beam evaporation of Ru. Annealing studies were carried out in vacuum and in air. The effective barrier height and the flatband barrier height of the as-deposited Schottky contacts were 0.86 and 0.91 eV, respectively. These barrier heights reached their respective maximum values of 0.93 and 0.96 eV, after annealing at 450 °C in vacuum. The electrical characteristics of a third set of contacts, which was subjected to prolonged (1000 min) annealing at 400 °C in vacuum, showed no measureable signs of degradation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106567

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